 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SEMICONDUCTOR TECHNICAL DATA DRIVER APPLICATIONS. FEATURES AF amplifier, solenoid drivers, LED drivers. Darlington connection. High DC current gain. Very small-sized package permitting sets to be made smaller and slimer. Complementary to KTD1854T. KTB1234T EPITAXIAL PLANAR PNP TRANSISTOR E K B DIM A B G 2 3 C D MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 A F D 1 E F G H I J K L C J CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse SYMBOL VCBO VCEO VEBO IC ICP PC * Tj Tstg 0.8 RATING -80 -50 -10 -200 -400 0.9 150 -55 150 ) UNIT V V V mA W 1. EMITTER 2. BASE 3. COLLECTOR Collector Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600 Marking EQUIVALENT CIRCUIT COLLECTOR Type Name BASE EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage ICBO IEBO ) TEST CONDITION VCB=-60V, IE=0 VEB=-8V, IC=0 IC=-10 A, IE=0 IC=-1mA, IB=0 IC=-10 A, IC=0 VCE=-2V, IC=-10mA VCE=-2V, IC=-100mA IC=-100mA, IB=-100 A IC=-100mA, IB=-100 A MIN. -80 -50 -10 5000 3000 -0.9 -1.5 -1.5 -2.0 V V TYP. MAX. -100 -100 UNIT nA nA V V V SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO hFE 1 hFE 2 VCE(sat) VBE(sat) 2001. 10. 23 Revision No : 0 I MAXIMUM RATINGS (Ta=25 ) L G H J TSM Lot No. SY 1/2 KTB1234T I C - V CE -100 COLLECTOR CURRENT I C (mA) -80 -60 -40 -20 0 0 -1 -2 -3 -4 -7A -6A h FE - I C 100K DC CURRENT GAIN h FE 50K 30K Ta=75 C Ta=25 C VCE =-2V -5A -4A -3A -2A -1A I B =0A 10K 5K 3K Ta=-25 C -5 1K -1 -3 -10 -30 -100 -200 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) V CE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -3 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) I C /I B =1000 VBE(sat) - I C -5 -3 I C /I B =1000 -1 Ta=-25 C Ta=25 C Ta=75 C Ta=-25 C Ta=25 C -0.5 -0.3 -0.2 -10 Ta=75 C -1 -0.5 -30 -50 -100 -300 -10 -30 -50 -100 -300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - V BE COLLECTOR POWER DISSIPATION PC (W) -200 COLLECTOR CURRENT I C (mA) VCE =-2V Pc - Ta 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) -160 -120 -80 -40 0 -0.6 Ta=25 C 5C Ta=2 5 C -0.8 -1.0 -1.2 Ta=7 -1.4 -1.6 -1.8 BASE-EMITTER VOLTAGE V BE (V) AMBIENT TEMPERATURE Ta ( C) 2001. 10. 23 Revision No : 0 2/2 |
Price & Availability of KTB1234TNBSP
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |